2SC3651 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – High-hFE, Low-Frequency General-Purpose Amp Applications

SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistors
2SC3651
Features
High DC current gain
High breakdown voltage
Low colleotor-to- emitter saturation voltage
High VEBO (VEBO 15V)
Very small size making it easy to provide high-density
small-sized hybrid IC's.
Absolute Maximum Ratings Ta = 25
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
Collector Current (pulse)
Collector Dissipation
Junotion Temperature
storage Temperature
*Mounted on ceramic board (250mm²X0.8mm)
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
120
100
15
200
300
500
1.3 *
150
-55 to 150
Electrical Characteristics Ta = 25
Parameter
collector cutoff Current
Emitter cutoff current
Symbol
ICBO
IEBO
DC Current Gain
hFE
Gain-Bandwidth product
Output Capacitance
Collector to Emitter Saturation Voltage
Base to Emitter Stauration Voltage
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
fT
cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Marking
Marking
CG
Testconditons
VCB=80V,IE=0
VEB=10V,IC=0
VCE=5V,IC=10mA
VCE=5V,IC=100mA
VCE=10V,IC=10mA
VCB=10V,f=1MHz
IC=100mA,IB=2mA
IC=100mA,IE=2mA
IC=100ìA,IE=0
IC=1mA,IB=0
IE=10ìA,IC=0
Unit
V
V
V
mA
mA
mA
W
Min Typ Max Unit
0.1 ìA
0.1 ìA
500 1000 2000
400
150
MHz
6.5
pF
0.15 0.5 V
V
V
V
V
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