2SC3649_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SC3649
Transistors
■ Features
● High breakdown voltage and large current capacity.
● Complementary to 2SA1419
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Peak Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICM
PC
TJ
Tstg
Rating
180
160
6
1.5
2.5
500
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
Collector- emitter breakdown voltage
VCBO
VCEO
Ic= 100 μA， IE= 0
Ic= 1 mA，RBE= ∞
Emitter - base breakdown voltage
VEBO IE= 100μA， IC= 0
Collector-base cut-off current
ICBO VCB= 120 V , IE= 0
Emitter cut-off current
IEBO VEB= 4V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=500mA, IB=50mA
Base - emitter saturation voltage
VBE(sat) IC=500mA, IB=50mA
DC current gain
VCE= 5V, IC= 100mA
hFE
VCE= 5V, IC= 10mA
Turn-ON Time
Storage Time
ton
tstg See sepcified Test Circuit.
Fall Time
tf
Collector output capacitance
Cob VCB= 10V,f=1MHz
Transition frequency
■ Classification of hfe(1)
Type
2SC3649-R
fT
VCE= 10V, IC= 50mA
2SC3649-S
2SC3649-T
Range
100-200
140-280
200-400
Marking
CER
CES
CET
1.Base
2.Collector
3.Emitter
Unit
V
A
mW
℃
Min Typ Max Unit
180
160
V
6
1
uA
1
0.13 0.45
V
0.85 1.2
100
400
80
40
1200
ns
80
14
pF
120
MHz
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