2SC3647 Datasheet, PDF (1/3 Pages) Unisonic Technologies – HIGH-VOLTAGE SWITCHING APPLICATIONS

SMD Type
Transistors
High-Voltage Switching Applications
2SC3647
Features
Adoption of FBET, MBIT Processes
High Breakdown Voltage and Large Current Capacity
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
2
A
Collector Current (Pulse)
ICP
3
A
Collector Power Dissipation
PC
500
mW
PC *
1.5
W
Jumction temperature
Tj
150
Storage temperature Range
Tstg
* Mounted on ceramic board (250 mm² x 0.8 mm)
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Gain-Bandwidth Product
Collector Output Capacitance
Turn-On Time
Storage Time
Fall Time
Symbol
Testconditons
ICBO VCB = 100V , IE = 0
IEBO VEB = 4V , IC = 0
V(BR)CBO IC = 10uA , IE = 0
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10uA , IC = 0
hFE VCE = 5V , IC = 100mA
VCE(sat) IC = 1A , IB = 100mA
VBE(sat) IC = 1A , IB = 100mA
fT VCE = 10V , IC = 100mA
Cob VCB = 10V , IE = 0 , f = 1MHz
ton
tstg ^{See Test Circuit.}
tf
Min Typ Max Unit
100 nA
100 nA
120
V
100
V
6
V
100
400
0.22 0.6 V
0.85 1.2 V
120
MHz
25
pF
80
750
ns
40
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