2SC3646_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SC3646
Transistors
■ Features
● High breakdown voltage and large current capacity.
● Fast switching speed.
● Complementary to 2SA1416
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Peak Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICM
PC
TJ
Tstg
Rating
120
100
6
1
2
500
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-ON Time
Storage Time
Fall Time
Collector output capacitance
Transition frequency
■ Classification of hfe
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA，RBE= ∞
VEBO IE= 100μA， IC= 0
ICBO VCB= 100 V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=400 mA, IB=40mA
VBE(sat) IC=400 mA, IB=40mA
hFE VCE= 5V, IC= 100mA
ton
tstg See sepcified Test Circuit.
tf
Cob VCB= 10V,f=1MHz
fT
VCE= 10V, IC= 100mA
Type
Range
Marking
2SC3646-R
100-200
CBR
2SC3646-R
140-280
CBS
2SC3646-T
200-400
CBT
1.Base
2.Collector
3.Emitter
Unit
V
A
mW
℃
Min Typ Max Unit
120
100
V
6
0.1
uA
0.1
0.1 0.4
V
0.85 1.2
100
400
80
850
ns
50
8.5
pF
120
MHz
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