2SC3632-Z_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
■ Features
● High voltage
● High speed
● Complementary to 2SA1413-Z
NPN Transistors
2SC3632-Z
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
Transistors
2.30 +0.1
-0.1
0.50 +0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
m ax
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Symbol
Rating
Unit
VCBO
600
VCEO
600
V
Emitter - Base Voltage
VEBO
7
Collector Current - Continuous
Collector current -pulse
(Note.1)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
IC
1
A
ICP
2
PC
2
W
TJ
150
℃
Tstg
-55 to 150
Note.1 : Pulse :PW ≤ 10ms,Duty Cycle ≤ 50℅
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 600V , IE= 0
Emitter cut-off current
Collector-emitter saturation voltage (Note.1)
Base - emitter saturation voltage (Note.1)
DC current gain (Note.1)
IEBO
VCE(sat)
VBE(sat)
hFE
VEB= 7V , IC=0
IC=400 mA, IB=80mA
IC=400 mA, IB=80mA
VCE= 5V, IC= 100mA
VCE= 5, IC= 500mA
Turn-on time
Storage time
Turn-off time
Collector output capacitance
ton
IC = 0.5 A, VCC= 250 V
tstg IB1 = −IB2 = 0.1 A
toff
RL = 500 Ω
Cob VCB= 10V, IE= 0,f=1MHz
Transition frequency
Note.1 : Pulse :PW ≤ 350us,Duty Cycle ≤ 2℅
■ Classification of hfe(1)
fT
VCE= 5V, IE= -50mA
Type
2SC3632-Z-M 2SC3632-Z-L 2SC3632-Z-K
Range
Marking
30-60
**M
40-80
**L
60-120
**K
1 Base
2 Collector
3 Emitter
Min Typ Max Unit
600
600
V
7
10
uA
10
0.35 1
V
0.9 1.2
30 55 120
5
7
0.1 0.5
4
5
us
0.2 0.5
14
pF
30
MHz
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