2SC3624 Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

SMD Type
TransistIoCrs
NPN Silicon Epitaxial Transistor
2SC3624
Features
High DC current Gain: hFE = 1000 to 3200.
Low VCE(sat): (VCE(sat) = 0.07 V TYP).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
60
V
VCEO
50
V
VEBO
12
V
IC
150
mA
PT
200
mW
Tj
150
Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Base-emitter voltage *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
*. PW 350ìs,duty cycle 2%
Symbol
Testconditons
ICBO VCB = 50V, IE=0
IEBO VEB = 10V, IC=0
hFE VCE = 5V , IC = 1mA
VBE VCE = 5V , IC = 1mA
VCE(sat) IC = 50mA , IB = 5mA
VBE(sat) IC = 50mA , IB = 5mA
fT VCE = 5V , IE = -10mA
Cob VCB = 5V , IE = 0 , f = 1.0MHz
ton VCC = 10V , VBE(off) = -2.7V
tstg IC = 50mA ,
toff IB1 = -IB2 = 1mA
hFE Classification
Marking
hFE
L17
1000 2000
L18
1600 3200
Min Typ Max Unit
100 nA
100 nA
1000 1800 3200
0.56
V
0.07 0.3 V
0.8 1.2 V
250
MHz
3
pF
0.13
ns
0.72
ns
1.22
ns
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