2SC3617 Datasheet, PDF (1/1 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

SMD Type
NPN Silicon Epitaxia
2SC3617
Features
World standard miniature package.
High hFE hFE=800 to 1600.
Transistors
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (Pulse)*
Total power dissipation
Junction temperature
Storage temperature
* PW 10ms,duty cycle 50%.
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
*. PW 350ìs,duty cycle 2%
Symbol
Rating
Unit
VCBO
50
V
VCEO
50
V
VEBO
15
V
IC
300
mA
ICP
500
mA
PT
2.0
W
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
ICBO VCB = 50V, IE=0
IEBO VEB = 10V, IC=0
VCE = 5.0V , IC = 100mA
hFE
VCE = 5.0V , IC = 300mA
VCE(sat) IC = 100mA , IB = 1.0mA
VBE(sat) IC = 100mA , IB = 1.0mA
fT VCE = 5.0V , IE = -50mA
Cob VCB = 10V , IE = 0, f = 1.0MHz
hFE Classification
Marking
hFE
TM
TL
800 1600 1200 2400
TK
2000 3200
Min Typ Max Unit
100 nA
100 nA
800
3200
640
0.12 0.13 V
0.7 1.2 V
150 220
MHz
8.0
pF
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