2SC3606 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

SMD Type
TransistIoCrs
Silicon NPN Epitaxial Planar Type
Features
Low noise figure, high gain.
NF = 1.1dB, |S21e|² = 11dB (f = 1 GHz)
2SC3606
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
20
V
VCEO
12
V
VEBO
3
V
IC
80
mA
IB
40
mA
PC
150
mW
Tj
125
Tstg
-55 to 125
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector output capacitance
Reverse transfer capacitance
Transition frequency
Insertion gain
Noise figure
Symbol
Testconditons
ICBO VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
VCE = 10 V, IC =20mA
Cob
VCB=10V,IE=0,f=1MHz,
Cre
fT
VCE =10 V, IC =20 mA
|S21e|² (1) VCE =10 V, IC =20 mA, f =500 MHz
|S21e| ² (2) VCE = 10 V, IC = 20 mA, f =1 GHz
NF (1) VCE =10 V, IC = 5 mA, f = 500 MHz
NF (2) VCE = 10 V, IC = 5 mA, f = 1 GHz
Marking
Marking
MH
Min Typ Max Unit
1 ìA
1 ìA
30
250 V
10
pF
0.7 1.15 pF
5
7
GHz
16.5
dB
7.5 11
dB
1
dB
1.1 2 dB
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