2SC3588-Z Datasheet, PDF (1/1 Pages) NEC – NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

SMD Type
Transistors
NPN Silicon Triple Diffused Transistor
2SC3588-Z
Features
High voltage VCEO=400V
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
500
V
Collector to emitter voltage
VCES
400
V
Emitter to base voltage
VEBO
7
V
Peak collector current *1
ICP
1
A
Collector current
IC
0.5
A
Total power dissipation TC = 25 *2
PT
2
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
*1 pw 10ms,Duty cycle 50%
*2 when mounted on ceramic substrate of 7.5cm²X0.7mm
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain *
Collector Saturation Voltage *
Base Saturation Voltage *
Turn-on Time
Storage Time
Fall Time
* Pulsed: PW 350ìA,Duty Cycle 2%
hFE Classification
Marking
M
hFE
20 to 40
L
30 to 60
Symbol
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
ton
tstg
tr
Testconditons
VCB=400V,IE=0
VEB=5.0V,IC=0
VCE=5V,IC=50mA
VCE=5V,IC=300mA
IC=300mA,IB=60mA
IC=300mA,IB=60mA
IC=0.3A,RL=500Ù,VCC=150V,
PW=50ìs,IB1=-IB2=0.06A
Duty Cycle 2%
K
40 to 80
Min Typ Max Unit
10 ìA
10 ìA
20 42 80
10 20
0.2 0.5 V
0.85 1.0 V
0.12 1.0
2.0 2.5 ìs
0.35 1.0
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