2SC3585 Datasheet, PDF (1/1 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR

SMD Type
TransistIoCrs
NPN Silicon Epitaxial Transistor
Features
NF 1.8 dB TYP. @f = 2.0 GHz
Ga 9 dB TYP. @f = 2.0 GHz
2SC3585
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
20
V
VCEO
10
V
VEBO
1.5
V
IC
35
mA
PT
200
mW
Tj
150
Tstg
-65 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cutoff current
ICBO VCB = 10 V, IE = 0
Emitter cutoff current
IEBO VEB = 1V, IC = 0
DC current gain
hFE*1 VCE = 6 V, IC =10 mA
Gain Bandwidth Product
fT VCE = 6 V, IC = 10 mA
Feed-Back Capacitance
Insertion Power Gain
Maximum Available Gain
Cre *2 VCB = 10 V, IE = 0, f = 1.0 MHz
|S21e|² VCE = 6 V, IC = 10 mA, f = 2.0 GHz
MAG VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Noise Figure
NF VCE = 6 V, IC = 5 mA, f = 2.0 GHz
*1. Pulse Measurement PW 350ìs, Duty Cycle 2 %
Min Typ Max Unit
1.0 ìA
1.0 ìA
50 100 250
10
GHz
0.3 0.8 pF
6.0 8.0
dB
10
dB
1.8 3.0 dB
*2.The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
hFE Classification
Marking
Rank
hFE
R43
R43/Q
50 100
R44
R44/R
80 160
R45
R45/S
125 250
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