2SC3583 Datasheet, PDF (1/1 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

SMD Type
TransistIoCrs
NPN Silicon Epitaxial Transistor
2SC3583
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Features
NF 1.2 dB TYP. @f = 1.0 GHz
Ga 13 dB TYP. @f = 1.0 GHz
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
20
V
VCEO
10
V
VEBO
1.5
V
IC
65
mA
Ptot
200
mW
Tj
150
Tstg
-65 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *1
Gain bandwidth product
Feed-Back Capacitance
Insertion Power Gain
Maximum Available Gain
Noise Figure
*1.Pulse Measurement PW
Symbol
ICBO
IEBO
hFE
fT
Cre *2
|
MAG
NF
350ìs, Duty Cycle 2 %
Testconditons
VCB = 10 V, IE = 0
VEB = 1 V, IE = 0
VCE = 8 V, IC = 20 mA
VCE = 8 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 8 V, IC = 20 mA, f = 1.0 GHz
VCE = 8 V, IC = 20 mA, f = 1.0 GHz
VCE = 8 V, IE = 7 mA, f = 1.0 GHz
Min Typ Max Unit
1.0 ìA
1.0 ìA
50 100 250
9
GHz
0.35 0.9 pF
11 13
dB
15
dB
1.2 2.5 dB
*2.The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
hFE Classification
Marking
Rank
hFE
R33
R33/Q
50 100
R34
R34/R
80 160
R35
R35/S
125 250
www.kexin.com.cn ¹