2SC3547B Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF OSCILLATOR APPLICATIONS)(COMMON COLLECTOR)

SMD Type
TransistIoCrs
Silicon NPN Epitaxial Planar Type
2SC3547B
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Features
Transition frequency is high and dependent on current excellently.
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
20
V
VCEO
12
V
VEBO
3
V
IB
15
mA
IC
30
mA
PC
150
mW
Tj
125
Tstg
-55 to +125
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Transition frequency
Output capacitance
Collector-base time constant
Symbol
Testconditons
ICBO VCB =10 V, IE = 0
IEBO VEB = 1 V, IC = 0
V(BR) CEO IC = 1 mA, IB = 0
hFE VCE = 10 V, IC = 5 mA
fT
VCE = 10 V, IC= 10 mA
Cob VCB = 10 V, IE =0, f =1 MHz
Cc.rbb' VCB = 10 V, IC = 5 mA, f = 30 MHz
Min Typ Max Unit
0.1 ìA
1.0 ìA
12
V
70
300
3
4
GHz
1.05 1.35 pF
4.5 9 ps
Marking
Marking
HM
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