2SC3518-Z_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
■ Features
● High DC current gain
● Low saturation voltage
● Complementary to 2SA1385-Z
NPN Transistors
2SC3518-Z
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
Transistors
2.30 +0.1
-0.1
0.50 +0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
m ax
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse *
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* PW ≤ 10ms,Duty Cycle ≤ 50℅
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage *
Base - emitter saturation voltage *
DC current gain *
Turn-on time
Storage time
Fall time
Transition frequency *
* Pulsed: PW ≤ 350us,Duty Cycle ≤ 2℅
■ Classification of hfe(1)
Marking
M
L
Range
100-200
160-320
2.3
4 .60 ^+0.15
-0.15
0.60+ 0.1
- 0.1
Symbol
Rating
Unit
VCBO
60
VCEO
60
V
VEBO
7
IC
5
A
ICP
7
PC
2
W
TJ
150
℃
Tstg
-55 to 150
1 Base
2 Collector
3 Emitter
Symbol
Test Conditions
Min Typ Max Unit
VCBO Ic= 100 μA， IE= 0
60
VCEO Ic= 1 mA， IB= 0
60
V
VEBO IE= 100μA， IC= 0
7
ICBO
IEBO
VCB= 50 V , IE= 0
VEB= 7V , IC=0
0.1
uA
0.1
VCE(sat) IC= 2A, IB= 200mA
VBE(sat) IC= 2A, IB= 200mA
0.3
V
1.2
VCE= 1V, IC= 2A
hFE
VCE= 1V, IC= 5A
100
400
50
ton
0.07 1
ts
IC=2A,VCC=10V,RL=5,IB1=-IB2=0.2A
0.8 2.5 us
tf
0.12 1
fT
VCE= 10V, IC= 500mA
120
MHz
K
200-400
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