2SC3496A Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Silicon Triple Diffused Transistor

SMD Type
Transistors
NPN Silicon Triple Diffused Transistor
2SC3496A
Features
High-speed switching
High collector-base voltage (Emitter open) VCBO
Satisfactory linearity of forward current transfer ratio hFE
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current
Collector power dissipation TC = 25
Ta = 25
Junction temperature
Storage temperature
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VCBO
1000
V
VCES
1000
V
VCEO
900
V
VEBO
7
V
IB
0.3
A
IC
1
A
ICP
2
A
30
PC
W
1.3
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
Collector-base cutoff current
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
VCEO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Testconditons
IC = 1 mA, IB = 0
VCB = 1000 V, IE = 0
VEB = 7 V, IC = 0
VCE = 5 V, IC = 0.05 A
VCE = 5 V, IC = 0.5 A
IC = 0.2 A, IB = 0.04 A
IC = 0.2 A, IB = 0.04 A
VCE = 10 V, IC = 0.05 A, f = 1 MHz
IC = 0.2 A
IB1 = 0.04 A, IB2 = -0.08 A
VCC = 250 V
Min Typ Max Unit
900
V
50 ìA
50 ìA
6
3
1.5 V
1.0 V
4
MHz
1.0 ìs
3.0 ìs
1 ìs
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