2SC3444 Datasheet, PDF (1/1 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY POWER AMPLFY APPLICATION SILICON NPN EPITAXIAL TYPE

SMD Type
Small Signal Transistor
2SC3444
Transistors
Features
High voltage VCEO=60V.
High collector current (Ic=1A).
High collector dissipation Pc=500mW.
Low VCE(sat): VCE(sat)=0.11V typ(@Ic=500mA,IB=25mA).
Small package for mounting.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Emitter-base voltage
Collector-emitter voltage
Peak collector current
Collector current
Collector dissipation (Ta=25 )
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
60
V
VEBO
6
V
VCEO
60
V
ICM
2
A
IC
1
A
PC
500
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Colllector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Symbol
Testconditons
V(BR)CBO IC=10ìA,IE=0
V(BR)EBO IE=10ìA,IC=0
V(BR)CEO IC=2mA,RBE=
ICBO VCB=50V,IE=0
IEBO VEB=4V,IC=0
hFE VCE=4V,IC=100mA
VCE(sat) IC=500mA,IB=25mA
fT VCE=2V,IE=-10mA
Cob VCB=10V,IE=0,f=1MHz
Min Typ Max Unit
60
V
6
V
60
V
0.2 ìA
0.2 ìA
55
300
0.11 0.3 V
80
MHz
14
pF
hFE Classification
Marking
hFE
DC
55 110
DD
90 180
DE
150 300
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