2SC3443_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SC3443
Transistors
■ Features
● High hFE :hFE=150 to 800
● High collector current
● Low collector to emitter saturation voltage
● High collector dissipation Pc=500mW
● Small package for mounting
● Complementary to 2SA1363
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
Collector - Emitter Voltage
VCBO
20
VCEO
16
V
Emitter - Base Voltage
VEBO
6
Collector Current - Continuous
Peak Collector Current
IC
2
A
ICM
3
Collector Power Dissipation
PC
500
mW
Junction Temperature
Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100uA， IE= 0
VCEO Ic= 2mA，RBE = ∞
VEBO IE= 100uA， IC= 0
ICBO VCB= 16V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=1A, IB=500mA
VBE(sat) IC=1A, IB=500mA
hFE VCE= 4V, IC= 100mA
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 2V, IC= 10mA
■ Classification of hfe
Type
2SC3443-E
Range
150-300
Marking
BE
2SC3443-F
250-500
BF
2SC3443-G
400-800
BG
Min Typ Max Unit
20
16
V
6
0.2
uA
0.2
0.17 0.3
V
1.2
150
800
28
pF
80
MHz
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