2SC3440_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
2SC3440
■ Features
● Low collector to emitter saturation voltage.
● Excellent linearity nof DC forward current gain.
● Super mini package for easy mounting.
● High collector current.
● Complementary to 2SA1365
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Peak Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICM
PC
TJ
Tstg
Rating
25
20
4
700
1
150
125
-55 to 125
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 100 uA，RBE= ∞
VEBO IE= 100 u A， IC= 0
ICBO VCB= 25 V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=500 mA, IB=25mA
VBE(sat) IC=500 mA, IB=25mA
hFE VCE= 4V, IC= 100mA
fT
VCE= 6V, IC= 10mA
■ Classification of hfe
Type
Range
Marking
2SC3340-E
150-300
BE
2SC3340-F
250-500
BF
2SC3340-G
400-800
BG
Unit
V
mA
A
mW
℃
Min Typ Max Unit
25
20
V
4
1
uA
1
0.2 0.5
V
1.2
150
800
180
MHz
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