2SC3439_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SC3439
Transistors
■ Features
● High hFE : hFE=400 to 1800
● High collector current
● Low collector to emitter saturation voltage
● High collector dissipation Pc=500mW
● Small package for mounting
● Complementary to 2SA1369
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Peak Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
30
VCEO
25
V
VEBO
6
IC
1.5
A
ICM
3
PC
500
mW
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100uA， IE= 0
VCEO Ic= 1mA， RBE= ∞
VEBO IE= 100uA， IC= 0
ICBO VCB= 20V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=1A, IB=20mA
VBE(sat) IC=1A, IB=20mA
hFE VCE= 6V, IC= 500mA
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 10V, IC= 10mA
■ Classification of hfe
Type
2SC3439-G
Range
400-800
Marking
HG
2SC3439-H
600-1200
HH
2SC3439-J
900-1800
HJ
Min Typ Max Unit
30
25
V
6
0.1
uA
0.1
0.2 0.5
V
1.2
400
1800
17
pF
130
MHz
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