2SC3438_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SC3438
Transistors
■ Features
● High Voltage VCEO = 100V
● High Collector Current (ICM = 800mA)
● High Collector Dissipation PC = 500mW
● Small Package For Mounting
● Complementary to 2SA1368
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Peak Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICM
PC
TJ
Tstg
Rating
100
100
5
500
800
500
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA，RBE= ∞
VEBO IE= 100μA， IC= 0
ICBO VCB= 50 V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=150 mA, IB=15mA
VBE(sat) IC=150 mA, IB=15mA
hFE VCE= 10V, IC= 10mA
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 10V, IC= 10mA
■ Classification of hfe
Type
Range
Marking
2SC3438-C
55-110
FC
2SC3438-D
90-180
FD
2SC3438-E
150-300
FE
Unit
V
mA
mW
℃
Min Typ Max Unit
100
100
V
5
0.5
uA
0.5
0.15 0.5
V
1.2
55
300
7
pF
130
MHz
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