2SC3360_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
2SC3360
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
■ Features
● High voltage VCEO=200V
● High DC Current Gain hFE=90 to 450
● Complementary to 2SA1330
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
200
Collector - Emitter Voltage
VCEO
200
V
Emitter - Base Voltage
VEBO
5
Collector Current - Continuous
IC
100
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
Storage Temperature Range
TJ
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector- base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage *1
Base - emitter saturation voltage *1
Base - emitter voltage
*1
DC current gain *1
Turn-ON Time
Storage Time
Fall Time
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， RBE= ∞
VEBO IE= 100μA， IC= 0
ICBO VCB= 200 V , IE= 0
IEBO VEB= 5V , IC=0
VCE(sat) IC=50mA, IB=5mA
VBE(sat) IC=50mA, IB=5mA
VBE VCE= 10V, IC= 10mA
VCE= 10V, IC= 10mA
hFE
VCE= 10V, IC= 50mA
ton
tstg IC=10mA,IB1=-IB2=1mA,VCC=10V
tf
VBE(off)=-2.5V
Cob VCB= 30V, IE=0,f=1MHz
fT
VCE= 10V, IC= 10mA
*1.pulsed:PW ≤ 350us,Duty Cycle ≤ 2℅
■ Classification of hfe(1)
Type
Range
Marking
2SC3360-N15
90-180
N15
2SC3360-N16
135-270
N16
2SC3360-N17
200-450
N17
1.Base
2.Emitter
3.collector
Min Typ Max Unit
200
200
V
5
0.1
uA
0.1
0.1 0.3
V
0.8 1.2
90 200 450
50 200
0.15
1.3
us
1.6
2.8
pF
160
MHz
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