2SC3357-HF Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SC3357-HF
Transistors
■ Features
● Low noise and high gain
● High power gain
● Large Ptot
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction to Ambient Resistance
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
Rth (j-a)
TJ
Tstg
Rating
20
12
3
100
1.2
62.5
150
-55 to 150
Unit
V
mA
W
℃/W
℃
1.Base
2.Collector
3.Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain (Note.1)
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 20V , IE= 0
IEBO VEB= 3V , IC=0
VCE(sat) IC=50 mA, IB=5mA
VBE(sat) IC=50 mA, IB=5mA
hFE
|S21e| ²
VCE= 10V, IC= 20mA
VCE = 10V, IC = 20mA, f= 1GHz
VCE = 10V, IC = 7mA, f= 1GHz
NF
VCE = 10V, IC = 40mA, f= 1GHz
Cre VCB= 10V, IE= 0,f=1MHz
fT
VCE= 10V, IC= 20mA
Note.1: Pulse measurement: PW ≤ 350 us, Duty Cycle ≤ 2%
■ Classification of hfe
Type
2SC3357-H-HF 2SC3357-F-HF 2SC3357-E-HF
Range
50-100
80-160
125-250
Marking
RH F
RF F
RE F
Min Typ Max Unit
20
12
V
3
1
uA
1
0.4
V
1.2
50
250
9
1.1
dB
1.8 3
1 pF
6.5
GHz
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