2SC3356 Datasheet, PDF (1/1 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)

SMD Type
Transistors
NPN Silicon Epitaxial Transistor
2SC3356
Features
Low noise and high gain.
NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
High power gain.
MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
20
V
VCEO
12
V
VEBO
3.0
V
IC
100
mA
Ptot
200
mW
Tj
150
Tstg
-65 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Insertion power gain
Noise figure
Reverse transfer capacitance
Transition frequency
*. Pulse measurement: PW 350
Symbol
Testconditons
ICBO VCB = 10 V, IE = 0 mA
IEBO VEB = 1.0 V, IC = 0 mA
hFE VCE = 10 V, IC = 20 mA
S21e ² VCE = 10 V, IC = 20 mA, f = 1 GHz
NF VCE = 10 V, IC = 7 mA, f = 1 GHz
Cre VCB = 10 V, IE = 0 mA, f = 1 MHz
fT
VCE = 10 V, IC = 20 mA
s, Duty Cycle 2%.
Min Typ Max Unit
1.0
A
1.0
A
50 120 250
11.5
dB
1.1 2.0 dB
0.55 1.0 pF
7
GHz
hFE Classification
Marking
Rank
hFE
R23
Q
50 100
R24
R
80 160
R25
S
125 250
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