2SC3356-HF Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
2SC3356-HF
Features
Low noise and high gain.
NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
High power gain.
MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
20
V
VCEO
12
V
VEBO
3.0
V
IC
100
mA
Ptot
200
mW
Tj
150
Tstg
-65 to +150
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage *
Base - emitter saturation voltage *
DC current gain *
Insertion power gain
Noise figure
Reverse transfer capacitance
Transition frequency
Symbol
Test Conditions
Min Typ Max Unit
VCBO Ic= 100 μA， IE= 0
20
VCEO Ic= 1 mA， IB= 0
12
V
VEBO IE= 100 uA， IC= 0
3
ICBO
IEBO
VCB= 10 V , IE= 0
VEB= 3V , IC=0
1
uA
1
VCE(sat) IC=50 mA, IB=5mA
VBE(sat) IC=50 mA, IB=5mA
0.4
V
1.2
hFE VCE= 10V, IC= 20mA
50
400
|S21e | ² VCE = 10 V, IC = 20 mA, f= 1GHz
NF VCE = 10 V, IC = 7 mA, f= 1GHz
11.5
dB
1.1 2
Cre VCB= 10V, IE= 0,f=1MHz
0.55 1 pF
fT
VCE= 10V, IC= 20mA
7
GHz
*. Pulse measurement: PW 350 s, Duty Cycle 2%.
hFE Classification
Type
2SC3356-R23-HF
Range
50-100
Marking
R23 F
2SC3356-R24-HF
80-160
R24 F
2SC3356-R25-HF
125-250
R25 F
2SC3356-R26-HF
250-400
R26 F
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