2SC3326 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)

SMD Type
TransistIoCrs
Silicon NPN Epitaxial
2SC3326
Features
High emitter-base voltage: VEBO = 25 V (min).
High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA).
Low on resistance: RON = 1 (typ.) (IB = 5 mA).
High DC current gain: hFE = 200 1200.
Small package.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
50
V
VCEO
20
V
VEBO
25
V
IC
300
mA
IB
60
mA
PC
150
mW
Tj
125
Tstg
-55 to +125
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