2SC3233 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)

SMD Type
Transistors
NPN Silicon Triple Diffused
2SC3233
Features
Excellent Switching Times
tr=1.0ìs (Max.) tf=1.0ìs (Max.) at IC=0.8A
High colletor Breakdown Voltage: VCEO=400V
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Base Current
Total Power dissipation Ta = 25
TC = 25
Junction temperature
Storage temperature
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VCBO
500
V
VCEO
400
V
VEBO
7
V
IC
2
A
IB
0.5
A
1
W
PC
20
W
Tj
150
Tstg
-55 to +150
1 Base
2 Collector
3 Emitter
Electrical Characteristics Ta = 25
Parameter
collector cutoff current
emitter cutoff current
Emitter-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
DC current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Voltage
Switching time turn-0n time
Switching storage time
Switching fall time
Symbol
ICBO
IEBO
V(BR)EBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
Testconditons
VCB=400V,IE=0
VEB=7V,IC=0
IE=1mA,IC=0
IC=10mA,IB=0
VCE=5V,IC=0.1A
VCE=5V,IC=1A
IC=0.1A,IB=0.2A
IC=0.1A,IB=0.2A
tr
tstg
tf
Min Typ Max Unit
100 ìA
1 mA
500
V
400
V
20
8
1
V
1.5 V
1.0 ìs
2.5 ìs
1 ìs
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