2SC3138 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING APPLICATIONS)

SMD Type
Transistors
Silicon NPN Triple Diffused Type
2SC3138
Features
High voltage. VCBO = 200 V (max)
VCEO = 200 V (max)
Small flat package.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
200
V
VCEO
200
V
VEBO
5
V
IC
50
mA
IB
20
mA
PC
150
mW
Tj
125
Tstg
-55 to +125
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
Testconditons
ICBO VCB = 200 V, IE = 0
IEBO VEB = 5 V, IC = 0
V(BR)CBO IC = 0.1 mA, IE = 0
V(BR)CEO IC = 1 mA, IB = 0
hFE VCE = 3 V, IC = 10 mA
VCE (sat) IC = 10 mA, IB = 1 mA
VBE (sat) IC = 10 mA, IB = 1 mA
fT VCE = 10 V, IC = 2 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
ton pulse width = 5ìs,duty cycle 2
tstg IB1=-IB2=0.6 mA
tf VCC=50V,IC=6mA
hFE Classification
Marking
Rank
hFE
NO
O
70 140
NY
Y
120 240
Min Typ Max Unit
0.1 ìA
0.1 ìA
200
V
200
V
70
240
0.1 0.5 V
0.75 1.5 V
50 100
MHz
2
4 pF
0.3
ìs
2
ìs
0.4
ìs
www.kexin.com.cn ¹