2SC3134_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
2SC3134
■ Features
● High VEBO.
● Wide ASO and high durability against breakdown.
● Complementary to 2SA1252
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
60
50
15
150
300
200
125
-55 to 125
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 40 V , IE= 0
IEBO VEB= 10V , IC=0
VCE(sat) IC=50 mA, IB=5mA
VBE(sat) IC=50 mA, IB=5mA
hFE VCE= 6V, IC= 1mA
Cob VCB= 6V, f=1MHz
fT
VCE= 6V, IC= 1mA
■ Classification of hfe
Marking
H4
Range
90-180
H5
135-270
H6
200-400
H7
300-600
Unit
V
mA
mW
℃
1.Base
2.Emitter
3.collector
Min Typ Max Unit
60
50
V
15
0.1
uA
0.1
0.5
V
1.2
90
600
2.2
pF
100
MHz
www.kexin.com.cn ¹