2SC3134 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Epitaxial Planar Silicon Transistor

SMD Type
TransistIoCrs
NPN Epitaxial Planar Silicon Transistor
2SC3134
Features
High VEBO.
Wide ASO and high durability against breakdown.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
60
V
VCEO
50
V
VEBO
15
V
IC
150
mA
Icp
300
mA
PC
200
mW
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
Testconditons
ICBO VCB=40V, IE=0
IEBO VEB=10V, IC=0
hFE VCE=6V, IC=1mA
fT VCE=6V, IC=1mA
Cob VCB=6V, f=1MHz
VCE(sat) IC=50mA, IB=5mA
V(BR)CBO IC=10ìA, IE=0
V(BR)CEO IC=1mA, RBE=
V(BR)EBO IE=10ìA, IC=0
1.Base
2.Emitter
3.collector
Min Typ Max Unit
0.1 ìA
0.1 ìA
90
560
100
MHz
2.2
pF
0.5 V
60
V
50
V
15
V
hFE Classification
Marking
Rank
hFE
4
90 180
H
5
135 270
6
200 400
7
300 600
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