2SC3122 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (TV VHF RF AMPLIFIER APPLICATIONS)

SMD Type
TransistIoCrs
Silicon NPN Epitaxial
2SC3122
Features
High Gain: Gpe=24dB(Typ.)(f=200MHz)
Low Noise :NF=2.0dB(Typ.)(f=200MHZ)
Excellent Forward AGC Characteristics
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector Power Dissipation
Junction temperature
Storage temperature Range
Symbol
Rating
Unit
VCBO
30
V
VCEO
30
V
VEBO
3
V
IC
20
mA
IB
10
mA
PC
150
mW
Tj
125
Tstg
-55 to +125
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
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