2SC3098 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (UHF~C BAND LOW NOISE AMPLIFIER APPLICATIONS)

SMD Type
TransistIoCrs
Silicon NPN Epitaxial
2SC3098
Features
Low Noise Figure
NF=2.5dB,|S21e|²=14.5dB(f=500MHz)
NF=3.0dB,|S21e|²=9.0dB(f=1GHz)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
30
V
VCEO
20
V
VEBO
3
V
IC
50
mA
IB
25
mA
PC
150
mW
Tj
125
Tstg
-55 to +125
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector output capacitance
Reverse Transfer Capacitance
Transition Frequency
Insertion Gain
Noise Figure
Symbol
Testconditons
ICBO VCB = 10 V, IE = 0
IEBO VEB = 1 V, IC = 0
hFE VCE = 10 V, IC = 10 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
Cre IC = 10 mA, IB = 1 mA
fT VCE = 10 V, IC = 10 mA
|S21e|2(1) VCE = 10 V, IC = 10 mA,f=500MHz
S21e|2(2) VCE = 10 V, IC = 10 mA,f=1GHz
NF(1) VCB=10V, IC=5 mA, f=500MHz
NF(2) VCB=10V, IC=5 mA, f=1GHz
Marking
Marking
MB
Min Typ Max Unit
1 ìA
1 ìA
30 80 300
1.15
pF
0.75
pF
3.5
GHz
14.5
dB
9
dB
2.5
dB
3
dB
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