2SC3076 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, SWITCING APPLICATIONS)

SMD Type
Silicon NPN Epitaxial
2SC3076
Transistors
Features
Low Collectror Saturation Voltage:VCE(sat)=0.5V(Max.)(IC=1A)
Excellent Switching Time :tstg=1.0ìs(Typ.)
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
2
A
Base Current
IB
1
A
Collector power dissipation
Ta=25
PC
1.0
A
TC=25
PC
10
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
Unit: mm
1 Base
2 Collector
3 Emitter
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