2SC3011 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (UHF~C BAND LOW NOISE AMPLIFIER APPLICATIONS)

SMD Type
TransistIoCrs
Silicon NPN Epitaxial
2SC3011
Features
High Gain :|S21e|²=12dB(TYP.)
Low Noise Figure: NF=2.3dB(Typ.) f=1GHz
High fT : fT=6.5GHz
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
20
V
VCEO
7
V
VEBO
3
V
IC
30
mA
IE
10
mA
PC
150
mW
Tj
125
Tstg
-55 to +125
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Reverse Transfer Capacitance
Input Capacitance
Transition Frequency
Insertion Gain
Noise Figure
Symbol
Testconditons
ICBO VCB = 10 V, IE = 0
IEBO VEB = 1.0 V, IC = 0
V(BR)CEO IC = 0.5 mA, IB = 0
hFE VCE = 5 V, IC = 10 mA
VCE (sat)
IC = 10 mA, IB = 1mA
VBE (sat)
Cob
VCB = 5 V, IE = 0, f = 1 MHz
Cre
Cib VEB=0,IC=0,f=1MHZ
fT VCE=5V,IC=10mA
|S21e|² VCE=5V,IC=10mA,f=1GHZ
NF VCE=5V,IC=5mA,f=1GHz
Marking
Marking
MA
Min Typ Max Unit
1.0 ìA
1.0 ìA
7
V
30 120
0.1
V
0.87
V
0.7 0.9 pF
0.5
pF
0.8
pF
6.5
GHz
12
dB
2.3
dB
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