2SC2996 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (FM/AM, RF, MIX, LOCAL, IF HIGH FREQUENCY AMPLIFIER APPLICATIONS)

SMD Type
TransistIoCrs
Silicon NPN Epitaxial
2SC2996
Features
High stability oscillation voltage on FM local oscillator.
Recommend FM/AM RF, MIX, local and IF.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
40
V
VCEO
30
V
VEBO
4
V
IC
50
mA
IE
-50
mA
PC
150
mW
Tj
125
Tstg
-55 to +125
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Transition frequency
Collector-base time constant
Noise figure
Power gain
Oscillation output voltage
Symbol
Testconditons
ICBO VCB = 40 V, IE = 0
IEBO VEB = 4 V, IC = 0
hFE VCE = 6V , IC = 1mA
Cre VCB = 6V , f = 1 MHz
fT VCE = 6V, IC = -1 mA
Cc rbb’ VCE = 6 V, IE = -1mA, f = 30 MHz
NF
VCE = 6 V, IE = -1mA, f = 100 MHz
Gpe
VOSC VCE = 6 V,f = 100 MHz
Min Typ Max Unit
0.1 ìA
0.5 ìA
40
240
0.9 1.3 pF
150 350
MHz
15 30 ps
4.0
dB
15
dB
150
mV
hFE Classification
Marking
hFE
GR
40 80
GO
70 140
GY
120 240
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