2SC2883-HF_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SC2883-HF
Transistors
■ Features
● Suitable for output stage of 3 watts amplifier
● Small flat package
● PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
● Complementary to 2SA1203-HF
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Collector - Base Voltage
VCBO
Collector - Emitter Voltage
VCEO
Emitter - Base Voltage
VEBO
Collector Current - Continuous
IC
BaseCurrent
IB
Collector Power Dissipation
PC
(Note.1)
Junction Temperature
TJ
Storage Temperature Range
Tstg
Note.1:Mounted on a ceramic substrate (250 mm ² × 0.8 t)
Rating
30
30
5
1.5
0.3
500
1000
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Collector- base breakdown voltage
Collector- emitter breakdown voltage
VCBO
VCEO
Ic= 1mA， IE= 0
Ic= 10mA， IB= 0
Emitter - base breakdown voltage
VEBO IE= 1mA， IC= 0
Collector-base cut-off current
ICBO VCB= 30V , IE= 0
Emitter cut-off current
IEBO VEB= 5V , IC=0
Collector-emitter saturation voltage
VCE(sat) IC=1.5A, IB=30mA
Base - emitter saturation voltage
VBE(sat) IC=1.5A, IB=30mA
Base - emitter voltage
VBE VCE= 2V, IC= 500mA
DC current gain
hFE VCE= 2V, IC= 500mA
Collector output capacitance
Transition frequency
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 2V, IC= 500mA
■ Classification of hfe
Type
2SC2883-O-HF 2SC2883-Y-HF
Range
100-200
160-320
Marking
GO* F
GY* F
Unit
V
A
mW
℃
Min Typ Max Unit
30
30
V
5
0.1
uA
0.1
2
1.2 V
1
100
320
40 pF
120
MHz
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