2SC2880 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)

SMD Type
Transistors
High Voltage Switching Applications
2SC2880
Features
High Voltage : VCEO = 150V
High Transition Frequency : fT = 120MHz(typ.)
Small Flat Package
Complementary to 2SA1200
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
150
V
Collector-Base Voltage
VCBO
200
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
50
mA
Base Current
IB
10
mA
Collector Power Dissipation
PC
500
mW
PC *
800
Jumction temperature
Tj
150
Storage temperature
Tstg
* Mounted on a ceramic substrate (250 mm² x 0.8 t)
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Emitter Cut-off Current
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transtion Frequency
Collector Output Capacitance
Symbol
Testconditons
IEBO VEB = 5V , IC = 0
ICBO VCB = 200V , IE = 0
hFE VCE = 5V , IC = 10mA
VCE(sat) IC = 10mA , IB = 1mA
VBE VCE = 5V , IC = 30mA
fT VCE = 30V , IC = 10mA
Cob VCB = 10V , IE = 0 , f = 1MHz
hFE Classification
Marking
Rank
hFE
O
70 140
A
Y
120 240
Min Typ Max Unit
0.1
A
0.1
A
70
240
0.5 V
1
V
120
MHz
3.5 5.0 pF
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