2SC2873 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

SMD Type
Silicon PNP Epitaxial Type
2SC2873
Transistors
Features
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A).
High speed switching time: tstg = 1.0 s (typ.).
Small flat package.
PC = 1.0 to 2.0 W
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
2
A
Base current
IB
0.4
A
Collector power dissipation
PC
500
mW
PC *1
1000
mW
Junction temperature
Tj
150
Storage temperature range
Tstg
-55 to +150
*1 Mounted on ceramic substrate (250 mm² X 0.8 t)
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