2SC2778 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification)

SMD Type
TransistIoCrs
Silicon NPN Epitaxial Planar Type
2SC2778
Features
Optimum for RF amplification, oscillation, mixing, and IF of FM/AM radios.
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
30
V
VCEO
20
V
VEBO
5
V
IC
30
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Forward current transfer ratio
Transition frequency
Reverse transfer capacitance
Symbol
Testconditons
VCBO IC = 10ìA, IE = 0
VCEO IC = 2 mA, IB = 0
VEBO IE = 10ìA, IC = 0
hFE VCE = 10 V, IC = 1 mA
fT VCB = 10 V, IE = -1 mA, f = 200 MHz
Cre VCB = 10 V, IE = -1 mA, f = 10.7 MHz
Min Typ Max Unit
30
V
20
V
5
V
70
250
150 230
MHz
1.3
pF
hFE Classification
Marking
hFE
KB
70 160
KC
110 250
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