2SC2735 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

SMD Type
TransistIoCrs
Features
Silicon NPN Epitaxial
2SC2735
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
30
V
VCEO
20
V
VEBO
3
V
IC
50
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector to emitter saturation voltage
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Symbol
Testconditons
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
ICBO VCB = 10V, IC = 0
VCE(sat) IC = 10 mA, IB = 5 mA
hFE VCE = 10 V, IC = 5 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
CG
VCC = 6 V, IC = 2 mA,f = 900 MHz,
fosc = 930 MHz (0dBm) ,f = 30 MHz
Oscillating output voltage
Conversion gain
Noise figure
VOSC1 VCC = 6 V, IC = 5 mA, f = 930 MHz
VOSC2 VCC = 12 V, IC = 7 mA, fOSC = 930 MHz
CG
VCC = 12 V, IC = 2 mA,f = 200 MHz, fOSC
= 230 MHz (0dBm)
NF
VCC = 12 V, IC = 2 mA, f = 200 MHz,
fOSC = 230 MHz (0dBm)
Min Typ Max Unit
30
V
20
V
3
V
0.5 ìA
1.0 V
40
0.85 1.5 pF
600 1200
MHz
210
mV
130
mV
21
dB
6.5
dB
Marking
Marking
JC
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