2SC2734 Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

SMD Type
Transistors
Features
UHF frequency converter
Silicon NPN Epitaxial
2SC2734
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
20
V
VCEO
11
V
VEBO
3
V
IC
50
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector to emitter saturation voltage
DC current gain
Collector output capacitance
Symbol
Testconditons
VCBO IC = 10ìA , IE = 0
VCEO IC = 1mA , RBE =
VEBO IE = 10ìA , IC = 0
ICBO VCB = 10V, IC = 0
VCE(sat) IC = 10 mA, IB = 5 mA
hFE VCE = 10 V, IC = 5 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
Conversion gain
CG
VCC = 6 V, IC = 2 mA,f = 900 MHz,
fosc = 930 MHz (0dBm) ,f = 30 MHz
Noise figure
Oscillating output voltage
Transition frequency
NF
VOSC
fT
VCC = 6 V, IC = 2 mA, f = 900 MHz,
fosc = 930 MHz (0dBm) , fout = 30 MHz
VCC = 6 V, IC = 5 mA, f = 930 MHz
VCE = 10 V, IC = 10 mA
Min Typ Max Unit
20
V
11
V
3
V
0.5
A
0.7 V
20 90 200
0.9 1.5 pF
15
dB
9
140
1.4 3.5
dB
mV
GHz
Marking
Marking
GC
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