2SC2732 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

SMD Type
TransistIoCrs
Features
UHF frequency converter
Silicon NPN Epitaxial
2SC2732
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
30
V
VCEO
25
V
VEBO
4
V
IC
20
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector to emitter saturation voltage
DC current transfer ratio
Gain bandwidth product
Collector output capacitance
Symbol
Testconditons
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
ICBO VCB = 10V, IC = 0
VCE(sat) IC = 10 mA, IB = 1 mA
hFE VCE = 10 V, IC = 3 mA
fT VCE = 10 V, IC = 5 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
Conversion gain
CG
VCC = 12 V, IC = 1 mA,f = 900 MHz,
fosc = 930 MHz (0dBm) ,f = 30 MHz
Noise figure
NF
VCC = 12 V, IC = 1 mA, f = 900 MHz,
fosc = 930 MHz (0dBm) , fout = 30 MHz
Min Typ Max Unit
30
V
25
V
4
V
0.5 ìA
5
V
30 60
700 1000
MHz
0.5 0.8 pF
7.0
dB
10.0
dB
Marking
Marking
EC
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