2SC2716 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – HIGH FREQUENCY AMPLIFIER APPLICATIONS

SMD Type
TransistIoCrs
Silicon NPN Epitaxial
2SC2716
Features
Low noise figure: NF = 3.5dB (max) (f = 1 MHz).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
35
V
VCEO
30
V
VEBO
4
V
IC
100
mA
IE
-100
mA
PC
150
mW
Tj
125
Tstg
-55 to +125
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector-base time constant
Power gain
Symbol
Testconditons
ICBO VCB = 20 V, IE = 0
IEBO VEB = 2 V, IC = 0
hFE VCE = 12 V, IC = 2 mA
VCE (sat) IC = 10 mA, IB = 1 mA
VBE (sat) IC = 10 mA, IB = 1 mA
fT VCE = 10V, IC = 2 mA
Cob VCB = 10V, IE = 0 , f = 1 MHz
Cc.rbb' VCE = 10V, IE = -1 mA , f = 30 MHz
Gpe
VCC = 10V, IE = -1 mA , f = 1 MHz,
Rg=50Ù
Min Typ Max Unit
0.1 ìA
1.0 ìA
40
240
0.4 V
1.0 V
80 120
MHz
2.2 3.0 pF
30 50 ps
2.0 3.5 dB
hFE Classification
Marking
hFE
FR
40 80
FO
70 140
FY
120 240
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