2SC2715 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH FREQUENCY AMPLIFIER APPLICATIONS)

SMD Type
TransistIoCrs
Silicon NPN Epitaxial
2SC2715
Features
High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz).
Recommended for FM IF, OSC stage and AM CONV. IF stage.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VCBO
35
V
VCEO
30
V
VEBO
4
V
IC
50
mA
IB
10
mA
PC
150
mW
Tj
125
Tstg
-55 to +125
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Collector-base time constant
Power gain
Symbol
Testconditons
ICBO VCB = 35 V, IE = 0
IEBO VEB = 4 V, IC = 0
hFE VCE = 12 V, IC = 2 mA
VCE (sat) IC = 10 mA, IB = 1 mA
VBE IC = 10 mA, IB = 1 mA
fT VCE = 10V, IC = 1 mA
Cob VCB = 10 V, IE = 0 , f = 1 MHz
Cc.rbb' VCE = 10V, IE = -1 mA , f = 30 MHz
Gpe VCC = 6V, IE = -1 mA , f = 10.7 MHz
Min Typ Max Unit
0.1 ìA
0.1 ìA
40
240
0.4 V
1
V
100
400 MHz
2 3.2 pF
50 ps
27 30 33 dB
hFE Classification
Marking
Rank
hFE
R
40 80
R
O
70 140
Y
120 240
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