2SC2618 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

SMD Type
TransistIoCrs
Silicon NPN Epitaxial
2SC2618
Features
Low frequency amplifier.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
35
V
VCEO
35
V
VEBO
4
V
IC
500
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Symbol
Testconditons
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
ICBO VCB = 20V, IC = 0
hFE1 VCE = 3V , IC = 10mA
hFE2 VCE = 3V , IC = 500mA
VCE(sat) IC = 150mA , IB = 15mA
VBE VCE = 3V , IC = 10mA
Min Typ Max Unit
35
V
35
V
4
V
0.5 ìA
100
320
10
0.2 0.6 V
0.64
V
hFE Classification
Marking
hFE
RC
100 200
RD
160 320
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