2SC2462 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

SMD Type
TransistIoCrs
Features
Low frequency amplifier.
Silicon NPN Epitaxial
2SC2462
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Base-emitter voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Symbol
Rating
Unit
VCBO
50
V
VCEO
40
V
VEBO
5
V
IC
100
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
VCBO IC = 10ìA , IE = 0
VCEO IC = 1mA , RBE =
VEBO IE = 10ìA , IC = 0
VBE VCE = 12V , IC = 2mA
ICBO VCB = 30V, IE=0
IEBO VEB = 2V, IC=0
hFE VCE = 12V , IC = 2mA
VCE(sat) IC = 10mA , IB = 1mA
Min Typ Max Unit
50
V
40
V
5
V
0.75 V
0.5
A
0.5
A
100
500
0.2 V
hFE Classification
Marking
Rank
hFE
LB
B
100 200
LC
C
160 320
LD
D
250 500
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