2SC2295 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification)

SMD Type
TransistIoCrs
Silicon NPN Epitaxial Planar Type
2SC2295
Features
Optimum for RF amplification of FM/AM radios.
High transition frequency fT.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
30
V
VCEO
20
V
VEBO
5
V
IC
30
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Forward current transfer ratio
Transition frequency
Noise figure
Reverse transfer impedance
Reverse transfer capacitance
Symbol
Testconditons
ICBO VCB = 10 V, IE = 0
hFE VCB = 10 V, IC = -1 mA
fT VCB = 10 V, IE = -1 mA, f = 200 MHz
NF VCB = 10 V, IE = -1 mA, f = 5 MHz
Zrb VCB = 10 V, IE = -1 mA, f = 2 MHz
Cre VCB = 10 V, Ic = -1 mA, f = 10.7 MHz
Min Typ Max Unit
0.1 ìA
70
220
100 250
MHz
2.8 4.0 dB
22 50 Ù
0.9 1.5 pF
hFE Classification
Marking
hFE
VB
70 140
VC
110 220
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