2SC2223-3 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
2SC2223
■ Features
● Collector Current Capability IC=20mA
● Collector Emitter Voltage VCEO=20V
Transistors
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 ^+0.02
-0.02
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
30
VCEO
20
V
VEBO
4
IC
20
mA
PC
150
mW
TJ
125
℃
Tstg
-55 to 125
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Noise Figure
Collector output capacitance
Collector to base time constant
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 25 V , IE= 0
IEBO VEB= 3V , IC=0
VCE(sat) IC=10 mA, IB=1mA
VBE(sat) IC=10 mA, IB=1mA
VBE VCE= 6V, IC= 1mA
hFE VCE= 6V, IC= 1mA
NF VCE= 6V, IE= -1mA,RG=50Ω,f=100MHz
Cob VCB= 6V, IE= 0,f=1MHz
Ccrb'b VCE= 6V, IE= -1mA,f=31.9MHz
fT
VCE= 6V, IE= -1mA
Min Typ Max Unit
30
20
V
4
100
nA
100
0.3
1.2 V
0.72
40
180
3
dB
1
pF
12
pS
400 600
MHz
■ Classification of hfe
Type
2SC2223-F12
Range
40-80
Marking
F12
2SC2223-F13
60-120
F13
2SC2223-F14
90-180
F14
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