2SC1923 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH FREQUENCY, FM, RF, MIX, IF AMPLIFIER APPLICATIONS)

DIP Type
Transistors
NPN Transistors
2SC1923
TO-92
4.8 ± 0.3
Unit:mm
3.8 ± 0.3
■ Features
● Collector Current Capability IC=20mA
● Collector Emitter Voltage VCEO=30V
● General Purpose Switching Application
0.60 Max
0.45 ± 0.1
12 3
1.27
2.54
0.5
1.Emitter
2.Collector
3.Base
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Rating
40
30
4
20
100
1250
150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 1 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 18 V , IE= 0
IEBO VEB= 4V , IC=0
VCE(sat) IC=20mA, IB=2 mA
VBE(sat) IC= 20mA, IB= 2 mA
hFE VCE= 6V, IC= 1mA
fT
VCE= 6V, IC= 1mA
Unit
V
mA
mW
℃/W
℃
Min Typ Max Unit
40
30
V
4
0.5
uA
0.5
0.6
V
1.2
40
200
550
MHz
■ Classification of hfe
Type
2SC1923-R
Range
40-80
2SC1923-O
70-140
2SC1923-Y
100-200
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