2SC1815_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
TransistIoCrs
Features
Power dissipation
NPN Transistors
2SC1815
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current to Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
60
V
VCEO
50
V
VEBO
5
V
IC
150
mA
PC
200
mW
Tj
125
Tstg
-55 to 125
Unit: mm
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Collector cut to off current
Collector cut to off current
Emitter cut to off current
DC current gain
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Testconditions
Ic= 100 A, IE=0
Ic= 0.1mA, IB=0
VCB=60V, IE=0
VCE=40V, IB=0
VEB= 5V, IC=0
VCE= 6V, IC= 2mA
IC=100 mA, IB= 10mA
IC=100 mA, IB= 10mA
VCE=10V, IC= 1mA,f=30MHz
Min Typ Max Unit
60
V
50
V
0.1
A
1
A
0.1
A
130
400
0.25 V
1
V
80
MHz
hFE Classification
Type
Range
Marking
2SC1815-L
130-200
HFL
2SC1815-H
200-400
HF
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