2SC1815 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

SMD Type
TransistIoCrs
Features
Power dissipation
NPN Transistor
2SC1815
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current to Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
60
V
VCEO
50
V
VEBO
5
V
IC
150
mA
PC
200
mW
Tj
125
Tstg
-55 to 125
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Collector cut to off current
Collector cut to off current
Emitter cut to off current
DC current gain
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Testconditons
Ic= 100 A, IE=0
Ic= 0.1mA, IB=0
VCB=60V, IE=0
VCE=50V, IB=0
VEB= 5V, IC=0
VCE= 6V, IC= 2mA
IC=100 mA, IB= 10mA
IC=100 mA, IB= 10mA
VCE=10V, IC= 1mA,f=30MHz
Min Typ Max Unit
60
V
50
V
0.1
A
0.1
A
0.1
A
130
400
0.25 V
1
V
80
MHz
hFE Classification
Marking
Rank
hFE
HF
L
H
130 200
200 400
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