2SC1653 Datasheet, PDF (1/3 Pages) NEC – DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

SMD Type
TransistIoCrs
NPN Silicon Epitaxial Transistor
2SC1653
Features
High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA)
High voltage VCEO : 130V
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
150
V
VCEO
130
V
VEBO
5
V
IC
50
mA
PD
150
mW
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Output capacitance
Transiston frequency
* Pulse test: tp 350 ìs; d 0.02.
Symbol
Testconditons
ICBO VCB = 130V, IE=0
IEBO VEB = 5V, IC=0
VCE =3V , IC = 15mA
hFE
VCE =3V , IC = 1mA
VCE(sat) IC = 50mA , IB = 5mA
VBE(sat) IC = 50mA , IB = 5mA
Cob VCB = 10V , IE = 0 , f = 1.0MHz
fT VCE = 10V , IE = -10mA
Min Typ Max Unit
0.1
A
0.1
A
90 200 400
70 180
0.1 0.3 V
0.73 1.0 V
2.3
pF
120
MHz
hFE Classification
Marking
hFE
N2
90 180
N3
135 270
N4
200 400
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